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| BYT85 Vishay Telefunken Ultra Fast Recovery Silicon Power Rectifier Features D D D D D Multiple diffusion High voltage High current Ultra fast forward recovery time Ultra fast reverse recovery time 14282 Applications Fast rectifiers in S.M.P.S, freewheeling and snubber diode in motor control circuits Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Peak forward surge current Repetitive peak forward current Average forward current Junction and storage temperature range Test Conditions Type Symbol BYT85-600 VR=VRRM BYT85-800 VR=VRRM BYT85-1000 VR=VRRM IFSM IFRM IFAV Tj=Tstg Value 600 800 1000 80 20 4 -55...+150 Unit V V V A A A C 10ms half sinewave Maximum Thermal Resistance Tj = 25_C Parameter Junction case Test Conditions Symbol RthJC Value 3 Unit K/W Document Number 86035 Rev. 2, 24-Jun-98 www.vishay.de * FaxBack +1-408-970-5600 1 (4) BYT85 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Forward recovery time Turn on transient peak voltage Reverse recovery characteristics y Reverse recovery time Test Conditions IF=4A IF=4A, Tj=100C VR=VRRM VR=VRRM, Tj=100C IF=4A, diF/dtx50A/ms , m IF=4A, diF/dt=-100A/ms, m VBatt=200V IF=4A, diF/dt=-100A/ms, VBatt=200V IF=0.5A, IR=1A, iR=0.25A Type Symbol Min Typ Max VF 1.8 VF 1.8 IR 10 IR 0.1 tfr 350 VFP 5 IRM 7 tIRM 70 trr 125 trr 80 Unit V V mA mA ns V A ns ns ns Characteristics (Tj = 25_C unless otherwise specified) 1000 I R - Reverse Current ( mA ) IF - Forward Current ( A ) VR = VR RM 100 100 TCase= 25C 10 10 1 1 0.1 0.1 0 94 9477 0.01 40 80 120 160 200 94 9476 0 0.6 1.2 1.8 2.4 3.0 Tj - Junction Temperature ( C ) VF - Forward Voltage ( V ) Figure 1. Typ. Reverse Current vs. Junction Temperature 6 I FAV- Average Forward Current ( A ) 5 4 RthJC=3K/W 3 2 1 0 0 94 9475 Figure 3. Typ. Forward Current vs. Forward Voltage t IRM - Reverse Recovery Time for IRM ( ns ) 150 120 90 RthJA=5K/W RthJA=10K/W RthJA=85K/W 60 30 0 0 50 100 150 200 -dIF/dt - Forward Current Rate of Change ( A/ms ) IF = 4A TC=25C VBatt=200V 40 80 120 160 200 94 9480 Tamb - Ambient Temperature ( C ) Figure 2. Max. Average Forward Current vs. Ambient Temperature Figure 4. Reverse Recovery Time for IRM vs. Forward Current Rate of Change www.vishay.de * FaxBack +1-408-970-5600 2 (4) Document Number 86035 Rev. 2, 24-Jun-98 BYT85 Vishay Telefunken 15 IRM - Reverse Recovery Current ( A ) t rr - Reverse Recovery Time ( ns ) 250 12 200 9 150 6 3 0 0 50 IF = 4A TC=25C VBatt=200V 100 150 200 100 50 0 0 50 100 150 200 IF = 4A TC=25C VBatt=200V 94 9478 -dIF/dt - Forward Current Rate of Change ( A/ms ) 94 9479 -dIF/dt - Forward Current Rate of Change ( A/ms ) Figure 5. Reverse Recovery Current vs. Forward Current Rate of Change Figure 6. Reverse Recovery Time vs. Forward Current Rate of Change Dimensions in mm 14276 Document Number 86035 Rev. 2, 24-Jun-98 www.vishay.de * FaxBack +1-408-970-5600 3 (4) BYT85 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 4 (4) Document Number 86035 Rev. 2, 24-Jun-98 |
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